1999•Unpublished venueRequires access

Low threshold current density, high power, high efficiency 670 nm GaInP/AlGaInP SQW laser diode

Linzhang Wu, Feng Gao, Liwei Fu, Rolf Winterhoff, F. Scholz, Yanshen Zhang

Abstract

Presents a high power (3.6 W from 64 /spl mu/m wide gain guided while 88.0 mW from 2 /spl mu/m wide ridge waveguide devices), high efficiency (95.5%) GaInP/AlGaInP SQW laser diode, which emits at 670 nm and has an ultra low threshold current density (238 A/cm/sup 2/) and very high characteristic temperature (150 K).

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Available abstract

Key concepts: Optoelectronics, Materials science, Diode, Laser, Semiconductor laser theory, Current density, Slope efficiency, Laser diode