2002•Unpublished venueRequires access
A study of structures with Al-free QWs in AlGaAs waveguides for laser diodes emitting at 800 nm
G. Erber, Frank Bugge, Juergen Sebastian, Klaus A. Vogel, H. Wenzel, M. Weyers
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Abstract
High power laser diodes emitting at 800 nm using strained GaAsP- and unstrained InGaAsP-SQWs in the active region are investigated. A very small far field angle of 23/spl deg/ and a high efficiency of 1.1 W/A for 1000 /spl mu/m long laser diodes are achieved. A 1 cm bar with 37.5 % active area shows a CW-output power of 60 W.