Simulation of deep level center based on deep-level transient spectroscopy

The basic principle of Deep-Level Transient Spectroscopy(DLTS) was introduced,and numerical calculation of a DLTS spectrum was carried out for n-doped samples.The simulation method of DLTS signal was described for the electron traps having a single deep level center in the p+n junction of 6H-SiC by Labview.From the result of the simulation for the deep level,the impacts of the parameters on the shapes of DLTS signals were demonstrated.The temperature and the half width of the DLTS peak depend systematically on all the parameters,while the height of the peak depends only on the value of rate window.