2011•Journal of Electronic MaterialsRequires access

Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy

Z.-Q. Fang, B. Claflin, D. C. Look, F. Chai, B. Odekirk

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Key concepts: Deep-level transient spectroscopy, Capacitance, Materials science, Wafer, Optoelectronics, Field-effect transistor, Penning trap, Transistor

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Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy — Research Paper | ScholarLens