ScholarLens Back to search
1982•Japanese Journal of Applied PhysicsOpen access

Note on the Analysis of DLTS and C2-DLTS

Hajime Tomokage, Hiroshi Nakashima, Kimio Hashimoto

Open full text 15 citations

Abstract

The difference in the peak temperatures of DLTS and C2-DLTS is discussed with reference to the measurement of deep levels in semiconductors. The emission rate of a trap level can be accurately determined when the peak temperature observed in DLTS agrees with that in C2-DLTS. When the peak temperatures disagree, the trap depth and trap density cannot be determined correctly, and the junction profile and trap density have a great effect on the peak temperatures of DLTS and C2-DLTS. These phenomena appear in DLTS and C2-DLTS measurements on Au-doped Si p+n diodes. It is necessary to use C2-DLTS together with DLTS in the study of deep impurities in semiconductors.

Open-access reader

About this research paper

What this paper is about

The difference in the peak temperatures of DLTS and C2-DLTS is discussed with reference to the measurement of deep levels in semiconductors. The emission rate of a trap level can be accurately determined when the peak temperature observed in DLTS agrees with that in C2-DLTS. When the peak temperatures disagree, the trap depth and trap density cannot be determined correctly, and the junction profile and trap density have a great effect on the peak temperatures of DLTS and C2-DLTS. These phenomena appear in DLTS and C2-DLTS measurements on Au-doped Si p+n diodes. It is necessary to use C2-DLTS together with DLTS in the study of deep impurities in semiconductors.

Why it matters

OpenAlex reports 15 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

The difference in the peak temperatures of DLTS and C2-DLTS is discussed with reference to the measurement of deep levels in semiconductors. The emission rate of a trap level can be accurately determined when the peak temperature observed in DLTS agrees with that in C2-DLTS. When the peak temperatures disagree, the trap depth and trap density cannot be determined correctly, and the junction profile and trap density have a great effect on the peak temperatures of DLTS and C2-DLTS. These phenomena appear in DLTS and C2-DLTS measurements on Au-doped Si p+n diodes. It is necessary to use C2-DLTS together with DLTS in the study of deep impurities in semiconductors.

Key concepts: Deep-level transient spectroscopy, Diode, Semiconductor, Atomic physics, Doping, Chemistry, Analytical Chemistry (journal), Materials science

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Note on the Analysis of DLTS and C2-DLTS — Research Paper | ScholarLens