High Power Integrate Devices——Integrated Gate Commutated Thyrister

This paper introduces a high-power integrated device——IGCT(Integrated Gate Commutated Thyrister).It has high current,high voltage,high switching frequency and low-loss characteristics.Its performance is superior to the GTO and IGBT devices.The paper introduces the structure features,working principle of IGCT,and key technology.It points out that IGCT will become the prior option for high power application.