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Research on IGCT and Gate Drive Circuit

Jing Xin-min

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Abstract

IGCT is a new high power semiconductor, which combines the advantage of IGBT and GTO.However, to realise its drive should the gate take the supporting gate drive circuit the operation principle of IGCT is introduced firstly, and then the design principle in detail. A 1 100 A /4 500 V reverse conducting integrated gate commutated thyristor gate drive circuit has been designed. The design method has been verified by serial experiments.

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What this paper is about

IGCT is a new high power semiconductor, which combines the advantage of IGBT and GTO.However, to realise its drive should the gate take the supporting gate drive circuit the operation principle of IGCT is introduced firstly, and then the design principle in detail. A 1 100 A /4 500 V reverse conducting integrated gate commutated thyristor gate drive circuit has been designed. The design method has been verified by serial experiments.

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Available abstract

IGCT is a new high power semiconductor, which combines the advantage of IGBT and GTO.However, to realise its drive should the gate take the supporting gate drive circuit the operation principle of IGCT is introduced firstly, and then the design principle in detail. A 1 100 A /4 500 V reverse conducting integrated gate commutated thyristor gate drive circuit has been designed. The design method has been verified by serial experiments.

Key concepts: Integrated gate-commutated thyristor, Thyristor, Gate turn-off thyristor, Insulated-gate bipolar transistor, MOS-controlled thyristor, Electrical engineering, Gate equivalent, Power (physics)

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