Integrated Gate Commutated Thyristor
Zhao Shuang
Abstract
Zhao Shuang
Abstract
This paper introduces a new power semiconductor device - integrated gate commutated thyristor (IGCT),along with its characteristics,operation principle and key technology,and points out that IGCT will be the prior option for high power application.
A significance statement is not available in the OpenAlex record.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
This paper introduces a new power semiconductor device - integrated gate commutated thyristor (IGCT),along with its characteristics,operation principle and key technology,and points out that IGCT will be the prior option for high power application.
Key concepts: Integrated gate-commutated thyristor, Thyristor, Gate turn-off thyristor, MOS-controlled thyristor, Electrical engineering, Power (physics), Static induction thyristor, Commutation