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Fabrication and Characterization of SiGe/Si HBT Operating at Low Temperature

Gao Guo

Abstract

The SiGe/Si HBTs operating at low temperature were fabricated.The current gain h fe(I c/I b)over 16000 and β(ΔI c/ΔI b)over 26000 have been observed at 77K,exceeding those at 290K by about 51 and 73 times,respectively.The temperature dependence of DC characteristics of the HBT between 290K and 77K was described and analyzed.The departure from theoretical expectation of this dependence at very low temperature was discussed.

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Key concepts: Heterojunction bipolar transistor, Materials science, Optoelectronics, Fabrication, Operating temperature, Characterization (materials science), Temperature measurement, Electrical engineering