2006•Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and AtomsRequires access
Theoretic Simulation for CMOS Device on Total Dose Radiation Response
Baoping He, He-Qin Zhou, Hongxia Guo, Chaohui He, Zhou Hui, Luo Yin-Hong, Fengqi Zhang
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Abstract
Total dose effect is simulated for C4007B,CC4007RH and CC4011 devices at different absorbed dose rate by using linear system theory.When irradiation response and dose are linear,total dose radiation and post-irradiation annealing at room temperature are determined for one random by choosing absorbed dose rate,and total dose effect at other absorbed dose rate can be predicted by using linear system theory.The simulating results agree with the experimental results at different absorbed dose rate.