Research of prediction method of radiation induced leakage current at low dose rate irradiation in space environment

A radiation response model of total dose effect for CMOS devices in a space environment is presented to predict the radiation-induced leakage current. Total effects for CC4007RH and C4007B devices at different dose rates irradiation of γ rays were calculated by using the established model. So long as total dose irradiation test and post-irradiation annealing test at room temperature were carried out by choosing one dose rate at random, total dose irradiation effects at other dose rates can be predicted by using the established models. Finally, the prediction results of 10-4-10-2 rad·s-1 low dose rate irradiation for CC4007RH and C4007B devices in space environment were presented.