2005•Hedianzixue yu tance jishuRequires access

Total dose effects in MOS devices under different dose rates

Zhu Xiaofeng, Zhou Kaiming, Xu Xi

Abstract

Three MOS devices are tested under two different dose rates of different simulation radiant point. The sensitive parameters related to the total-dose and the dose rate about the threshold voltage of MOSFET are studied in detail. The experiment results are analysed and discussed. Experimentation indicates:under the same radiation dose, ionizing radiation damage at low dose rate is more than that at high dose rate.

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Available abstract

Key concepts: Dose rate, Ionizing radiation, Radiation, Threshold voltage, Materials science, Radiation dose, Absorbed dose, Effective dose (radiation)