Development of Low Energy X-ray Si-PIN Detectors Based on Planar technology

This paper describes the processing method of low energy X-ray Si-PIN detectors manufactured by planar technology.In order to decrease the detectors' leakage current,the surface passivation technique was used and a guard ring around a detector's sensitive area was designed.The paper gives the measurement results of the leakage currents of Si-PIN detectors with 5 mm2 and 10mm2 sensitive area respectively.The spectra of 5 mm2 Si-PIN detectors for 55Fe5.9keV X ray are also provided at room temperature and low temperature,the detectors cooled with two stage peltiers.