MOS Model 20 Based RF-SOI LDMOS Large-Signal Modeling

A novel large-signal equivalent circuit model of RF-SOI LDMOS based on Philips MOS Model 20(MM20)is presented.The weak avalanche effect and the power dissipation caused by self-heating are described.The RF parasitic elements are extracted directly from measured S-parameters with analytical methods.Their final values can be obtained quickly and accurately through the necessary optimization.The model is validated in DC,AC small-signal,and large-signal analyses for an RF-SOI LDMOS of 20-fingers(channel mask length,L=1μm,finger width,W=50μm)gate with high resistivity substrate and body-contact.Excellent agreement is achieved between simulated and measured results for DC,S-parameters(10MHz~20.01GHz),and power characteristics,which shows our model is accurate and reliable.MM20 is improved for RF-SOI LDMOS large-signal applications.This model has been implemented in Verilog-A using the ADS circuit simulator(hpeesofsim).