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Improved compact channel current model of power radio frequency SOI LDMOS for CAD tools

Cao Quan-Jun, Jia Li-Xin, Xiongxiong He, Jie Zeng

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Abstract

Based on a drift current model, along the channel current of MM20 model, an approved SOI LDMOS compact model is presented in this paper. A continued and concise expression of the presented model for easily analysis of harmonic balance, which considers the quasi-saturation effect of SOI LDMOS and short channel effect, are observed. Comparison of simulated results of DC I-V and transform characteristic for the presented model with measured data are made, which shows they are well agreed, and this model is verified.

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What this paper is about

Based on a drift current model, along the channel current of MM20 model, an approved SOI LDMOS compact model is presented in this paper. A continued and concise expression of the presented model for easily analysis of harmonic balance, which considers the quasi-saturation effect of SOI LDMOS and short channel effect, are observed. Comparison of simulated results of DC I-V and transform characteristic for the presented model with measured data are made, which shows they are well agreed, and this model is verified.

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Available abstract

Based on a drift current model, along the channel current of MM20 model, an approved SOI LDMOS compact model is presented in this paper. A continued and concise expression of the presented model for easily analysis of harmonic balance, which considers the quasi-saturation effect of SOI LDMOS and short channel effect, are observed. Comparison of simulated results of DC I-V and transform characteristic for the presented model with measured data are made, which shows they are well agreed, and this model is verified.

Key concepts: LDMOS, Silicon on insulator, Harmonic balance, Electronic engineering, CAD, Radio frequency, Channel (broadcasting), Electrical engineering

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