The Research of Large-signal Model for RF LDMOSFETs

RF power device plays a determinant role on performances of RF power amplifier.However,there has not any accurate and uniform model developed for this device up to date.Therefore a new large signal model was found for SOI LDMOS,which is a nonlinear model based on sub-circuit model.The model consists of modeling of DC character and S-parameter modeling and extracting of other related parameters.The simulation results indicate that this model could simulate the DC character and frequency performance of RF SOI LDMOS device more accurately.That is to say,the model is applied to design of RF power amplifier and model support for front-end design.