2010•Research & Progress of SSE Solid State ElectronicsRequires access

A Theory Model on Remote-interface-roughness-scattering from High-k/Interlayer Dielectric Stacks

Xu Jing-Ping

Abstract

The degradation of carrier mobility caused by remote-interface-roughness-scattering was simulated using two-subband model.The effects of permittivity and thicknesses of high-k and interlayer on RIRS-limited mobility were discussed.The simulated results show that an interlayer dielectric with higher permittivity and high-k dielectric with lower permittivity are preferred to keep high mobility and small EOT.

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Key concepts: Permittivity, Materials science, Dielectric, Scattering, High-κ dielectric, Surface finish, Interface (matter), Degradation (telecommunications)