2007•IEEE Transactions on Power ElectronicsRequires access

Investigation on Gate Drive Circuit of IGCT

Xinmin Jin

Abstract

This paper introduces the basic structure of Gate Commutation Thyristor(GCT),which combines the advantages of IGBT and GTO.It has both the characteristics of turning off as transistor and turning on as thyrsitor.The Integrated Gate Commutation Thyristor(IGCT) is a new kind of high power semiconductor,and must have the integrated gate drive circuit to finish hard turning on and turning off's processes.The gate drive circuit influences GCT's characteristic directly.The gate drive circuit of 630A/4500V reverse conducting IGCT has been designed and the basic principle of gate drive circuit and designing method are analyzed.

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Key concepts: Integrated gate-commutated thyristor, Thyristor, Gate turn-off thyristor, MOS-controlled thyristor, Insulated-gate bipolar transistor, Static induction thyristor, Commutation, Electrical engineering