2007Unpublished venueRequires access

Recent developments in IGCT gate units

Bjorn Backlund, Matthias A. Luescher

Open publisher page 8 citations

Abstract

Recent improvements in GCT silicon design have allowed increased turn-off capabilities for IGCTs thus placing greater demands on the gate-unit. This paper shows how the design challenges arising from this new turn-off capability have been addressed to re-establish "a balance" between the semiconductor and the gate unit for optimal IGCT performance.

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What this paper is about

Recent improvements in GCT silicon design have allowed increased turn-off capabilities for IGCTs thus placing greater demands on the gate-unit. This paper shows how the design challenges arising from this new turn-off capability have been addressed to re-establish "a balance" between the semiconductor and the gate unit for optimal IGCT performance.

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OpenAlex reports 8 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Recent improvements in GCT silicon design have allowed increased turn-off capabilities for IGCTs thus placing greater demands on the gate-unit. This paper shows how the design challenges arising from this new turn-off capability have been addressed to re-establish "a balance" between the semiconductor and the gate unit for optimal IGCT performance.

Key concepts: Integrated gate-commutated thyristor, Computer science, Unit (ring theory), Logic gate, Electrical engineering, Electronic engineering, Engineering, Thyristor

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