Recent developments in IGCT gate units
Bjorn Backlund, Matthias A. Luescher
Abstract
Bjorn Backlund, Matthias A. Luescher
Abstract
Recent improvements in GCT silicon design have allowed increased turn-off capabilities for IGCTs thus placing greater demands on the gate-unit. This paper shows how the design challenges arising from this new turn-off capability have been addressed to re-establish "a balance" between the semiconductor and the gate unit for optimal IGCT performance.
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Recent improvements in GCT silicon design have allowed increased turn-off capabilities for IGCTs thus placing greater demands on the gate-unit. This paper shows how the design challenges arising from this new turn-off capability have been addressed to re-establish "a balance" between the semiconductor and the gate unit for optimal IGCT performance.
Key concepts: Integrated gate-commutated thyristor, Computer science, Unit (ring theory), Logic gate, Electrical engineering, Electronic engineering, Engineering, Thyristor