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2005•Journal of Xidian UniversityRequires access

Study of the SiGe HBT based on the self-alignment and air-bridge

Daoguang Liu, Yue Hao, Kaicheng Li, Yukui Liu, Rongkan Liu, Huiyong Hu

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Abstract

By using base-emitter self-alignment and air-bridge technology, the base resistance of SiGe heterojunction bipolar transistors(HBT) together with the capacitance between collector and base is reduced; in addition, the maximum oscillation frequency (f_(max)) is improved. In this paper, SiGe HBT f_(max) of (124.2GHz)has been obtained based on MBE SiGe materials.

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What this paper is about

By using base-emitter self-alignment and air-bridge technology, the base resistance of SiGe heterojunction bipolar transistors(HBT) together with the capacitance between collector and base is reduced; in addition, the maximum oscillation frequency (f_(max)) is improved. In this paper, SiGe HBT f_(max) of (124.2GHz)has been obtained based on MBE SiGe materials.

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Available abstract

By using base-emitter self-alignment and air-bridge technology, the base resistance of SiGe heterojunction bipolar transistors(HBT) together with the capacitance between collector and base is reduced; in addition, the maximum oscillation frequency (f_(max)) is improved. In this paper, SiGe HBT f_(max) of (124.2GHz)has been obtained based on MBE SiGe materials.

Key concepts: Heterojunction bipolar transistor, Bipolar junction transistor, Common emitter, Capacitance, Optoelectronics, Materials science, Heterojunction, Heterostructure-emitter bipolar transistor

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