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A Study on Frequency Performance of SiGe HBT Based on SOI Structure

Mo‐Hua Yang

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Abstract

Based on the theory of SOI technology,the frequency performance of SiGe HBT's with SOI structure is simulated.Compared with the bulk SiGe HBT,simulation results show that the buried oxide layer,BOX,can reduce the collector-base capacitance C_(cb) and the substrate-base capacitance C_(sb) by 94.7% and 94.6% in maximum,respectively.And the maximum oscillation frequency is improved by a factor of 2.7.The study demonstrates that SOI structure greatly improves the frequency performance of SiGe HBT's,and so,it is applicable for high-speed and high power IC's.

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What this paper is about

Based on the theory of SOI technology,the frequency performance of SiGe HBT's with SOI structure is simulated.Compared with the bulk SiGe HBT,simulation results show that the buried oxide layer,BOX,can reduce the collector-base capacitance C_(cb) and the substrate-base capacitance C_(sb) by 94.7% and 94.6% in maximum,respectively.And the maximum oscillation frequency is improved by a factor of 2.7.The study demonstrates that SOI structure greatly improves the frequency performance of SiGe HBT's,and so,it is applicable for high-speed and high power IC's.

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Available abstract

Based on the theory of SOI technology,the frequency performance of SiGe HBT's with SOI structure is simulated.Compared with the bulk SiGe HBT,simulation results show that the buried oxide layer,BOX,can reduce the collector-base capacitance C_(cb) and the substrate-base capacitance C_(sb) by 94.7% and 94.6% in maximum,respectively.And the maximum oscillation frequency is improved by a factor of 2.7.The study demonstrates that SOI structure greatly improves the frequency performance of SiGe HBT's,and so,it is applicable for high-speed and high power IC's.

Key concepts: Heterojunction bipolar transistor, Silicon on insulator, Capacitance, Materials science, Oscillation (cell signaling), Optoelectronics, Substrate (aquarium), Base (topology)

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