Investigation into Low Insertion-Loss & High Isolation SOI RF Switch

A low insertion-loss high isolation SOI RF switch for wireless communication systems was presented based on 0.18 μm RF SOI CMOS technology. This switch circuit reduced insertion-loss and increased isolation by using special structures,such as buried oxide and high-resistance substrate,and SOI devices,such as FB,BC,BT,etc. And so,it had a better isolation performance,compared with bulk CMOS devices. Simulation results showed that the switch circuit had an insertion-loss of -1 dB and an isolation of 40 dB at 2.4 GHz.