A High Performance PD SOI CMOS Single-Pole Double-Throw T/R Switch for 2.4GHz Wireless Applications
Lei Chen, Liang Tian, Jin Yun Zhou, Aibo Huang, Zongsheng Lai
Abstract
Lei Chen, Liang Tian, Jin Yun Zhou, Aibo Huang, Zongsheng Lai
Abstract
A single-pole double-throw (SPDT) T/R switch is designed in a PD SOI CMOS process for 2.4 GHz wireless applications. Based on the advantage of PD SOI device structure, the presented switch gets a high performance on insertion loss and isolation. Process and device characteristics are studied in detail, including floating body effect, substrate crosstalk reduction and on-resistivity trade-off. The designed SPDT switch has an insertion loss of -1 dB and isolation of 40 dB at 2.4 GHz frequency, respectively.
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A single-pole double-throw (SPDT) T/R switch is designed in a PD SOI CMOS process for 2.4 GHz wireless applications. Based on the advantage of PD SOI device structure, the presented switch gets a high performance on insertion loss and isolation. Process and device characteristics are studied in detail, including floating body effect, substrate crosstalk reduction and on-resistivity trade-off. The designed SPDT switch has an insertion loss of -1 dB and isolation of 40 dB at 2.4 GHz frequency, respectively.
Key concepts: Silicon on insulator, Insertion loss, Crosstalk, CMOS, Materials science, Optoelectronics, Electrical engineering, Wireless