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A High Performance PD SOI CMOS Single-Pole Double-Throw T/R Switch for 2.4GHz Wireless Applications

Lei Chen, Liang Tian, Jin Yun Zhou, Aibo Huang, Zongsheng Lai

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Abstract

A single-pole double-throw (SPDT) T/R switch is designed in a PD SOI CMOS process for 2.4 GHz wireless applications. Based on the advantage of PD SOI device structure, the presented switch gets a high performance on insertion loss and isolation. Process and device characteristics are studied in detail, including floating body effect, substrate crosstalk reduction and on-resistivity trade-off. The designed SPDT switch has an insertion loss of -1 dB and isolation of 40 dB at 2.4 GHz frequency, respectively.

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What this paper is about

A single-pole double-throw (SPDT) T/R switch is designed in a PD SOI CMOS process for 2.4 GHz wireless applications. Based on the advantage of PD SOI device structure, the presented switch gets a high performance on insertion loss and isolation. Process and device characteristics are studied in detail, including floating body effect, substrate crosstalk reduction and on-resistivity trade-off. The designed SPDT switch has an insertion loss of -1 dB and isolation of 40 dB at 2.4 GHz frequency, respectively.

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Available abstract

A single-pole double-throw (SPDT) T/R switch is designed in a PD SOI CMOS process for 2.4 GHz wireless applications. Based on the advantage of PD SOI device structure, the presented switch gets a high performance on insertion loss and isolation. Process and device characteristics are studied in detail, including floating body effect, substrate crosstalk reduction and on-resistivity trade-off. The designed SPDT switch has an insertion loss of -1 dB and isolation of 40 dB at 2.4 GHz frequency, respectively.

Key concepts: Silicon on insulator, Insertion loss, Crosstalk, CMOS, Materials science, Optoelectronics, Electrical engineering, Wireless

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