Influence of magnetic field intensity and cathode voltage on the etching morphology of circular planar target in DC magnetron sputtering

The magnetic field and charged particles distribution of the circular target model in DC magnetron sputtering was simulated using the Comsol and Matlab sofwares.The distribution of charged particles under the conditions of different magnetic field strength and different cathode voltage were also studied.By comparing the curves of ion flux density distribution,it's shown that the curve will become narrow with the enhancement of the magnetic field and almost not change with the variation of cathode voltage.It means that the target etching morphology will become narrow with the enhancement of the magnetic field,which is independent of the cathode voltage.A guidance for process parameter optimization in DC magnetron sputtering is thus provided.