THE DESIGN ON RECTANGULAR PLANAR MAGNETRON-SPUTTERING TARGET WITH THE HIGH INTENSITY OF MAGNETIC FIELD
Chang Tian
Abstract
Chang Tian
Abstract
The probability of low voltage magnetron sputtering achieved by high intensity of magnetic field has been studied. Several factors confining the upper limit of the intensity B of magnetic field parallel to target surface in rectangular planar magnetronsputtering target have been studied by theory analysis, practice design and experiment. The rectangular planar magnetron sputtering target with B of 009 T has been designed. The results showed that the increase of the Breduced greatly the touching off and keeping discharge voltage during magnetron sputtering coating, which give other approach to low voltage magnetron sputtering.\;
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The probability of low voltage magnetron sputtering achieved by high intensity of magnetic field has been studied. Several factors confining the upper limit of the intensity B of magnetic field parallel to target surface in rectangular planar magnetronsputtering target have been studied by theory analysis, practice design and experiment. The rectangular planar magnetron sputtering target with B of 009 T has been designed. The results showed that the increase of the Breduced greatly the touching off and keeping discharge voltage during magnetron sputtering coating, which give other approach to low voltage magnetron sputtering.\;
Key concepts: Sputter deposition, Cavity magnetron, Sputtering, High-power impulse magnetron sputtering, Magnetic field, Materials science, Intensity (physics), Planar