Study of the Threshold Setting for IGCT Re-trigger
Luyao Xie
Abstract
Luyao Xie
Abstract
Integrated gate commutated thyristor(IGCT) is developed on the basis of the gate turn-off thyristor(GTO) as a new current-type device.IGCT integrated gate commutated thyristor(GCT) and gate drive circuit with a high-voltage high-current,etc.,and is widely used in high power applications.The application of IGCT to the voltage source converter is quite unique because of its specialty.This thesis argues that it is necessary and important to make the re-trigger of IGCT and analysis of the IGCT re-trigger mechanism based on the analysis of the specialty of IGCT,the principle of switching and the working principle of drive circuit and points out that internal re-trigger threshold needs to be setted reasonably.And in order to properly set re-trigger threshold,proposes an experimental program to simulate the IGCT needed to re-trigger in voltage source inverter.The experimental results show that this program verify whether to set a reasonable threshold,thereby improving the reliability and safety of the IGCT application.
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Integrated gate commutated thyristor(IGCT) is developed on the basis of the gate turn-off thyristor(GTO) as a new current-type device.IGCT integrated gate commutated thyristor(GCT) and gate drive circuit with a high-voltage high-current,etc.,and is widely used in high power applications.The application of IGCT to the voltage source converter is quite unique because of its specialty.This thesis argues that it is necessary and important to make the re-trigger of IGCT and analysis of the IGCT re-trigger mechanism based on the analysis of the specialty of IGCT,the principle of switching and the working principle of drive circuit and points out that internal re-trigger threshold needs to be setted reasonably.And in order to properly set re-trigger threshold,proposes an experimental program to simulate the IGCT needed to re-trigger in voltage source inverter.The experimental results show that this program verify whether to set a reasonable threshold,thereby improving the reliability and safety of the IGCT application.
Key concepts: Integrated gate-commutated thyristor, Thyristor, MOS-controlled thyristor, Reliability (semiconductor), Electrical engineering, Voltage, Inverter, Gate turn-off thyristor