Silicon-on-insulator 1×2 Y-junction Optical Switch Based on Waveguide-vanishing Effect
Cezhou Zhao, Enke Liu, Guozheng Li, Yuliang Liu, Guo Lin
Abstract
Cezhou Zhao, Enke Liu, Guozheng Li, Yuliang Liu, Guo Lin
Abstract
The silicon-on-insulator(SOI) 1×2 Y-junction optical waveguide switch has been proposed and fabricated,which is based on the large cross-section single-mode rib waveguide condition,the waveguide-vanishing effect and the free-carrier plasma dispersion effect.In the switch,the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing.The insertion loss and extinction ratio of the device are measured to be less than 4.78 dB and 20.8 dB respectively at a wavelength of 1.3 μm and an injection current of 45 mA.Response time is about 160 ns.
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The silicon-on-insulator(SOI) 1×2 Y-junction optical waveguide switch has been proposed and fabricated,which is based on the large cross-section single-mode rib waveguide condition,the waveguide-vanishing effect and the free-carrier plasma dispersion effect.In the switch,the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing.The insertion loss and extinction ratio of the device are measured to be less than 4.78 dB and 20.8 dB respectively at a wavelength of 1.3 μm and an injection current of 45 mA.Response time is about 160 ns.
Key concepts: Silicon on insulator, Materials science, Waveguide, Extinction ratio, Insertion loss, Silicon, Optoelectronics, Optical switch