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1997•Chinese Physics LettersOpen access

Double-Injection Bifurcation Optical Active Switch Integrated on Silicon-on-Insulator for 1.3 μm Operation

Cezhou Zhao, Aihua Chen, Liu En-ke, Guozheng Li

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Abstract

Based on the double-injection effect, the dual-mode interference principle and the free-carrier plasma dispersion effect, a double-injection bifurcation optical active switch integrated on silicon-on-insulator has been proposed and fabricated. Its insertion loss and crosstalk are measured to be less than 5.32 and -14.4 dB, respectively, at wavelength 1.3 μm and the total switching current 90 mA. Response time is about 180 ns.

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Based on the double-injection effect, the dual-mode interference principle and the free-carrier plasma dispersion effect, a double-injection bifurcation optical active switch integrated on silicon-on-insulator has been proposed and fabricated. Its insertion loss and crosstalk are measured to be less than 5.32 and -14.4 dB, respectively, at wavelength 1.3 μm and the total switching current 90 mA. Response time is about 180 ns.

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Available abstract

Based on the double-injection effect, the dual-mode interference principle and the free-carrier plasma dispersion effect, a double-injection bifurcation optical active switch integrated on silicon-on-insulator has been proposed and fabricated. Its insertion loss and crosstalk are measured to be less than 5.32 and -14.4 dB, respectively, at wavelength 1.3 μm and the total switching current 90 mA. Response time is about 180 ns.

Key concepts: Materials science, Silicon on insulator, Optoelectronics, Bifurcation, Crosstalk, Wavelength, Silicon, Optics

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