The Development of Hf Based High-K Gate Dielectrics

With the rapid development of microelectronics technology,the feature size of MOSFET has scaled down to below 100nm.Silicon dioxide will no longer meet the requirements of the future MOSFET for gate dielectric material.So,we should look for a new high-K gate dielectric to replace SiO_2.It is widely believed that Hf based high- K gate dielectrics material is the most prospective one to replace silicon dioxide as the next generation gate dielectrics material.This paper provides a brief view of the significance of high-K gate dielectric,the latest development of high- K gate dielectric,and what people have done to overcome the drawback of high-K gate dielectric.In the end,this paper introduces a MOSFET fabricated by high-K gate dielectric.