2006•Unpublished venueRequires access

Hf-based high-k gate dielectrics - Scalability for hp45 node and beyond -

Yasuo Nara, Seiji Inumiya, Satoshi Kamiyama, Kunio Nakamura

Abstract

This proceeding we will discuss the scalability of Hf-based high-k gate dielectrics for hp45 node and beyond both with high-temperature gate-first integration and low-temperature gate-last integration. It describes the process optimization and metal gate MOSFET characteristics using gate-first integration with HfSiON and gate-last integration with HfO2.

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Available abstract

Key concepts: Scalability, Node (physics), High-κ dielectric, Metal gate, Gate dielectric, Dielectric, MOSFET, Process integration