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Design of a Novel CMOS Reference for DC-DC Converter

Yangbo Yi

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Abstract

A novel CMOS reference,which is based on the temperature coefficient of threshold voltage and mobility,is presented in this paper.The circuit can provide a voltage reference and a current reference with low temperature coefficient simultaneously.The proposed reference has been fabricated in 3 μm CMOS process.The experiment result manifests that the reference voltage is approximately 763 mV and the temperature coefficient is 92×10-6/℃.The voltage changes less than 6.6 mV from 0 to 100℃.The reference has been used in DC-DC converters successfully.

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What this paper is about

A novel CMOS reference,which is based on the temperature coefficient of threshold voltage and mobility,is presented in this paper.The circuit can provide a voltage reference and a current reference with low temperature coefficient simultaneously.The proposed reference has been fabricated in 3 μm CMOS process.The experiment result manifests that the reference voltage is approximately 763 mV and the temperature coefficient is 92×10-6/℃.The voltage changes less than 6.6 mV from 0 to 100℃.The reference has been used in DC-DC converters successfully.

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Available abstract

A novel CMOS reference,which is based on the temperature coefficient of threshold voltage and mobility,is presented in this paper.The circuit can provide a voltage reference and a current reference with low temperature coefficient simultaneously.The proposed reference has been fabricated in 3 μm CMOS process.The experiment result manifests that the reference voltage is approximately 763 mV and the temperature coefficient is 92×10-6/℃.The voltage changes less than 6.6 mV from 0 to 100℃.The reference has been used in DC-DC converters successfully.

Key concepts: Voltage reference, Temperature coefficient, CMOS, Voltage, Bandgap voltage reference, Electrical engineering, Materials science, Electronic engineering

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