Design of a High-precision Low-temperature-drift Voltage Reference
Sun Weifeng
Abstract
Sun Weifeng
Abstract
A high-precision low-temperature-drift CMOS voltage reference is presented in this paper.It uses the traditional principle of bandgap reference together with the self-bias structure and startup circuit to get the stable voltage output and good temperature coefficient.The proposed reference has been fabricated in standard 0.6μm CMOS process.The experiment result manifests that the reference voltage is approximately 1.209 V and the temperature coefficient is 66 ppm/℃.The voltage changes about 2 mV when the supply voltage changes from 2 V to 6 V.Now the voltage reference has been successfully applied in the CMOS DC/DC converters with good performance.
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A high-precision low-temperature-drift CMOS voltage reference is presented in this paper.It uses the traditional principle of bandgap reference together with the self-bias structure and startup circuit to get the stable voltage output and good temperature coefficient.The proposed reference has been fabricated in standard 0.6μm CMOS process.The experiment result manifests that the reference voltage is approximately 1.209 V and the temperature coefficient is 66 ppm/℃.The voltage changes about 2 mV when the supply voltage changes from 2 V to 6 V.Now the voltage reference has been successfully applied in the CMOS DC/DC converters with good performance.
Key concepts: Bandgap voltage reference, Voltage reference, Temperature coefficient, Voltage, CMOS, Electrical engineering, Materials science, Power supply rejection ratio