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A CMOS Voltage Reference with Current Superposition

Yangbo Yi

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Abstract

A CMOS voltage reference without bipolar junction transistor is presented,which is based on the temperature coefficient of threshold voltage and mobility.With an improvement on the structure,a CMOS voltage reference with current superposition is formed to obtain different values of voltage reference.Implemented in a 3 μm CMOS process,the proposed reference can provide a reference voltage of approximately 2.2 V and a temperature coefficient of 80 ppm/℃,and the voltage changes less than 25 mV from 0 to 100 ℃.

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What this paper is about

A CMOS voltage reference without bipolar junction transistor is presented,which is based on the temperature coefficient of threshold voltage and mobility.With an improvement on the structure,a CMOS voltage reference with current superposition is formed to obtain different values of voltage reference.Implemented in a 3 μm CMOS process,the proposed reference can provide a reference voltage of approximately 2.2 V and a temperature coefficient of 80 ppm/℃,and the voltage changes less than 25 mV from 0 to 100 ℃.

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Available abstract

A CMOS voltage reference without bipolar junction transistor is presented,which is based on the temperature coefficient of threshold voltage and mobility.With an improvement on the structure,a CMOS voltage reference with current superposition is formed to obtain different values of voltage reference.Implemented in a 3 μm CMOS process,the proposed reference can provide a reference voltage of approximately 2.2 V and a temperature coefficient of 80 ppm/℃,and the voltage changes less than 25 mV from 0 to 100 ℃.

Key concepts: Voltage reference, Bandgap voltage reference, CMOS, Voltage, Superposition principle, Electrical engineering, Materials science, Temperature coefficient

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