Study of a CMOS band-gap reference circuit with low temperature drift

To meet the requirement of low tempreture drift and low power consumption power supply in submicron integrated circuit,a CMOS band-gap reference circuit with first-order temperature compensation was presented.The presented circuit is fabricated by using the 0.25μm N-well CMOS process of chartered corp.The core circuit of the CMOS band-gap reference circuit was constitued of bipolar transistors,which came ture VBE plusing VT linearly to obtain near zero temperature coefficient output voltage.The simulation results under 3.3 V power supply voltage for this circuit by using T-SPICE show that the temperature coefficient is about 10×10-6/℃ in the range-20℃ to 70℃.The standard deviation of output voltage is 1mV.The power consumption is 5.2831 mW.It is a low temperature coefficients and low power consumption band-gap voltage reference.