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2004•Journal of Electron DevicesRequires access

Design of a CMOS Band-Gap Voltage Reference with Low Drift of Temperature

Luo Lan, Asic System

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Abstract

A CMOS band-gap reference circuit with first-order temperature compensation is presented. Prototype of the band-gap reference is fabricated using the 0.25 μm N-well CMOS process of Chartered Corp. The simulation results for this circuit using HSPICE show that the temperature coefficient is about 12·10-6/℃ in the range - 25 to 85℃。 The power consumption is 3.8 mW at 3.3 V power supply. It' s a low temperature coefficients and low power consumption band - gap voltage reference.

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What this paper is about

A CMOS band-gap reference circuit with first-order temperature compensation is presented. Prototype of the band-gap reference is fabricated using the 0.25 μm N-well CMOS process of Chartered Corp. The simulation results for this circuit using HSPICE show that the temperature coefficient is about 12·10-6/℃ in the range - 25 to 85℃。 The power consumption is 3.8 mW at 3.3 V power supply. It' s a low temperature coefficients and low power consumption band - gap voltage reference.

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Available abstract

A CMOS band-gap reference circuit with first-order temperature compensation is presented. Prototype of the band-gap reference is fabricated using the 0.25 μm N-well CMOS process of Chartered Corp. The simulation results for this circuit using HSPICE show that the temperature coefficient is about 12·10-6/℃ in the range - 25 to 85℃。 The power consumption is 3.8 mW at 3.3 V power supply. It' s a low temperature coefficients and low power consumption band - gap voltage reference.

Key concepts: Bandgap voltage reference, CMOS, Voltage reference, Temperature coefficient, Materials science, Electrical engineering, Power consumption, Atmospheric temperature range

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