An Analysis of Mechanism of SnS Thin Film Deposited by Chemical Bath
Chunrui Zheng
Abstract
Chunrui Zheng
Abstract
This paper studies the deposition mechanism of SnS thin film by chemical bath using triethanolamine(TEA),thioacetamide,SnCl_2·2H_2O,ammonia(aqeous) as reactants and using NH_4Cl(aqeous) as buffer aqeous.The influence of the complexing agent and NH_4Cl on the chemical reaction was analyzed.The results indicate that the thioacetamide and the SnCl_2·2H_2O were the reaction source of Sn~(2+)and S~(2-)that can be used to form SnS thin films,and that the TEA as a complexing agent was able to maintain Sn~(2+)concentration in solution. Adding the NH_4Cl can make the PH value of the solution change smoothly in reaction, which was favorable for the formation of high quality SnS thin films.
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This paper studies the deposition mechanism of SnS thin film by chemical bath using triethanolamine(TEA),thioacetamide,SnCl_2·2H_2O,ammonia(aqeous) as reactants and using NH_4Cl(aqeous) as buffer aqeous.The influence of the complexing agent and NH_4Cl on the chemical reaction was analyzed.The results indicate that the thioacetamide and the SnCl_2·2H_2O were the reaction source of Sn~(2+)and S~(2-)that can be used to form SnS thin films,and that the TEA as a complexing agent was able to maintain Sn~(2+)concentration in solution. Adding the NH_4Cl can make the PH value of the solution change smoothly in reaction, which was favorable for the formation of high quality SnS thin films.
Key concepts: Triethanolamine, Chemical bath deposition, Thioacetamide, Thin film, Chemical reaction, Ammonia, Chemistry, Inorganic chemistry