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Design of a High Precision and Low Temperature Drift Bandgap Reference

Jiaguo Wu

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Abstract

A High Precision CMOS voltage reference circuit is designed by the TSMC 40 nm CMOS process.Spectre simulation shows that the temperature coefficient is 10×10-6/℃ in the temperature range from-40 to 125.The change of the voltage reference is 0.42 mV,and the change rate is 0.23 mV/V in the power supply voltage range of 1.5~3.3 V.PSRR is 72 dB after using the cascode current mirror.

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What this paper is about

A High Precision CMOS voltage reference circuit is designed by the TSMC 40 nm CMOS process.Spectre simulation shows that the temperature coefficient is 10×10-6/℃ in the temperature range from-40 to 125.The change of the voltage reference is 0.42 mV,and the change rate is 0.23 mV/V in the power supply voltage range of 1.5~3.3 V.PSRR is 72 dB after using the cascode current mirror.

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Available abstract

A High Precision CMOS voltage reference circuit is designed by the TSMC 40 nm CMOS process.Spectre simulation shows that the temperature coefficient is 10×10-6/℃ in the temperature range from-40 to 125.The change of the voltage reference is 0.42 mV,and the change rate is 0.23 mV/V in the power supply voltage range of 1.5~3.3 V.PSRR is 72 dB after using the cascode current mirror.

Key concepts: Bandgap voltage reference, Power supply rejection ratio, Voltage reference, Cascode, Temperature coefficient, CMOS, Materials science, Voltage

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