A 1.8- V High-Precision Compensated CMOS Bandgap Reference
Xie-Ren Hsu Ro-Min Weng
Abstract
Xie-Ren Hsu Ro-Min Weng
Abstract
A high-precision temperature-compensated ompensated CMOS bandgap reference is proposed and simulated using tsmc 0.18-μm process. The bandgap reference can be operated from a supply voltage as low as 1.8-V. The proposed circuit generates an output reference voltage of 615.1 mV with a variation of ±0.7 mV over a temperature range from 0 to 70°C. The output reference voltage exhibits ± 1mV supply variation from the mean value when the supply changes from 1.6-V to 2.4-V. The power supply rejection ratio is greater than 35 dB for frequency below 10 kHz. The presented bandgap reference occupies only 0.1 mm2 layout area after trimming.
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A high-precision temperature-compensated ompensated CMOS bandgap reference is proposed and simulated using tsmc 0.18-μm process. The bandgap reference can be operated from a supply voltage as low as 1.8-V. The proposed circuit generates an output reference voltage of 615.1 mV with a variation of ±0.7 mV over a temperature range from 0 to 70°C. The output reference voltage exhibits ± 1mV supply variation from the mean value when the supply changes from 1.6-V to 2.4-V. The power supply rejection ratio is greater than 35 dB for frequency below 10 kHz. The presented bandgap reference occupies only 0.1 mm2 layout area after trimming.
Key concepts: Bandgap voltage reference, Voltage reference, Line regulation, Silicon bandgap temperature sensor, Trimming, Voltage, Materials science, CMOS