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Development of Large Area Si Detectors Based on Planar Technology for Charged Particles

Zhang Wan-chang, Sun Liang, Huang Xiaojian, Liu Yang, Guozhu Chen

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Abstract

This paper describes the processing method of large area Si detectors fabricated by planar technology for charged particles.In order to decrease the detectors' leakage current,the surface passivation technique was used.The paper gives the measurement results of the leakage current of 300μm thick,20mm diameter detectors and 500μm thick,40mm diameter detectors respectively.The spectra of the detectors for 241Am 5.486MeV α particles are also provided at room temperature.

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What this paper is about

This paper describes the processing method of large area Si detectors fabricated by planar technology for charged particles.In order to decrease the detectors' leakage current,the surface passivation technique was used.The paper gives the measurement results of the leakage current of 300μm thick,20mm diameter detectors and 500μm thick,40mm diameter detectors respectively.The spectra of the detectors for 241Am 5.486MeV α particles are also provided at room temperature.

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Available abstract

This paper describes the processing method of large area Si detectors fabricated by planar technology for charged particles.In order to decrease the detectors' leakage current,the surface passivation technique was used.The paper gives the measurement results of the leakage current of 300μm thick,20mm diameter detectors and 500μm thick,40mm diameter detectors respectively.The spectra of the detectors for 241Am 5.486MeV α particles are also provided at room temperature.

Key concepts: Planar, Detector, Passivation, Leakage (economics), Charged particle, Materials science, Optoelectronics, Optics

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