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2012•EPE JournalRequires access

Normally-On SiC JFETs: Active Protections

Fabien M. Dubois, Dominique Bergogne, Cyril Buttay, Hervé Morel, Régis Meuret

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Abstract

Normally-on Silicon Carbide JFETs are powerful power switches that allow improvement of the efficiency and high temperature operation capability of Voltage Source Inverters (VSI). However, some safety considerations have to be taken against short-circuit, voltage breakdown and punch-through conditions. In this paper, it is proposed an overview of the failure mechanisms of the SiC JFET. Fast and reliable solutions to protect SiC JFETs are also presented. Experimental validation of such protections and investigation of gate destruction mode are proposed.

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What this paper is about

Normally-on Silicon Carbide JFETs are powerful power switches that allow improvement of the efficiency and high temperature operation capability of Voltage Source Inverters (VSI). However, some safety considerations have to be taken against short-circuit, voltage breakdown and punch-through conditions. In this paper, it is proposed an overview of the failure mechanisms of the SiC JFET. Fast and reliable solutions to protect SiC JFETs are also presented. Experimental validation of such protections and investigation of gate destruction mode are proposed.

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Available abstract

Normally-on Silicon Carbide JFETs are powerful power switches that allow improvement of the efficiency and high temperature operation capability of Voltage Source Inverters (VSI). However, some safety considerations have to be taken against short-circuit, voltage breakdown and punch-through conditions. In this paper, it is proposed an overview of the failure mechanisms of the SiC JFET. Fast and reliable solutions to protect SiC JFETs are also presented. Experimental validation of such protections and investigation of gate destruction mode are proposed.

Key concepts: JFET, Silicon carbide, Electrical engineering, Materials science, Voltage, Power semiconductor device, High voltage, Power (physics)

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