2008•China-Ireland International Conference on Information and Communications Technologies (CIICT 2008)Requires access
An accurate large-signal model for RF SOI LDMOS including self-heating effect
Huang Wang, Lingling Sun, Zhiping Yu, Jun Liu
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Abstract
An accurate RF SOI LDMOS large-signal equivalent circuit model based on NXP MOS Model 20 (MM20) is presented. The avalanche effect and the power dissipation caused by self-heating are described. The RF parasitic elements are extracted directly from measured S-parameters with analytical methods. Then their final values are obtained quickly and accurately through necessary optimization. The model is validated in DC, AC small-signal, and large-signal analyses for an RF SOI LDMOS of 20-fingers (channel mask length, L = 1μm, finger width, W = 50 μm) gate with high resistivity substrate and body-contact. Excellent agreement is achieved between simulated and measured results for DC, S-parameters (10 MHz~20.01 GHz), and power characteristics, which shows our model is accurate and reliable. MM20 is improved for RF SOI LDMOS large-signal applications. This model has been implemented in Verilog-A using the ADS circuit simulator (hpeesofsim).