2010•Solid-State ElectronicsRequires access

Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions

Siyang Liu, Weifeng Sun, Qinsong Qian, Jing Zhu

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Key concepts: LDMOS, Silicon on insulator, Materials science, Optoelectronics, Stress (linguistics), Degradation (telecommunications), Substrate (aquarium), Doping

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Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions — Research Paper | ScholarLens