Low Power Full Adder Using 8T Structure
Amin Bazzazi, Alireza Mahini, Jelveh Jelini
Abstract
Amin Bazzazi, Alireza Mahini, Jelveh Jelini
Abstract
A low power and high performance 1-bit full adder cell is proposed. The 8T Full Adder technique has been used for the generation of XOR function. Twelve state-of-the- art 1-bit full adders and one proposed full adder are simulated with HSPICE using 0.18µm CMOS Technology at 1.8V supply voltage. By optimizing the transistor size in each stage the power and delay are minimized. The results of post-layout simulation compared to similar reported ones illustrate significant improvement. Simulation results show great improvement in terms of Power-Delay-Product (PDP). The power consumption of this adder is 200nw.
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A low power and high performance 1-bit full adder cell is proposed. The 8T Full Adder technique has been used for the generation of XOR function. Twelve state-of-the- art 1-bit full adders and one proposed full adder are simulated with HSPICE using 0.18µm CMOS Technology at 1.8V supply voltage. By optimizing the transistor size in each stage the power and delay are minimized. The results of post-layout simulation compared to similar reported ones illustrate significant improvement. Simulation results show great improvement in terms of Power-Delay-Product (PDP). The power consumption of this adder is 200nw.
Key concepts: Adder, Power–delay product, Serial binary adder, Computer science, CMOS, XOR gate, Carry-save adder, Electronic engineering