2005•Unpublished venueRequires access

Status and outlook of emerging nonvolatile memory technologies

Georg Müller, Thomas D. Happ, M. Kund, G.Y. Lee, N. Nagel, Recai Sezi

Abstract

This paper reviews the concept, status and challenges of emerging nonvolatile memory technologies. The technologies that are discussed and compared to state of the art flash technology are the conductive bridging RAM (CBRAM), the ferro-electric RAM (FeRAM), the magneto-resistive RAM (MRAM), the organic RAM (ORAM) and the phase change RAM (PCRAM).

About this research paper

What this paper is about

Why it matters

OpenAlex reports 53 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Key concepts: Ferroelectric RAM, Magnetoresistive random-access memory, Non-volatile memory, Bridging (networking), Non-volatile random-access memory, Phase-change memory, Resistive random-access memory, Universal memory