Demonstration of 1T1C FeRAM Arrays for Nonvolatile Memory Applications

Over the past few years, concern over high-density and low-power embedded memories has risen for various applications, such as cache memory, Internet of Things (IoT), and in-memory computing. Traditional memories, such as embedded or external flash memories, are facing the challenge of scaling down beyond 28-nm technology due to high process costs resulting from complex structures. On the contrary, magnetoresistive random access memory (MRAM) has been receiving increased attention as it can be integrated in 22-nm technology. Resistive memory requires a high switching current during write or read operations, leading to high energy consumption. To control this consumption, dedicated access devices are necessary.