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1994•Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and PhenomenaRequires access

Lithographic performance of a negative resist under scattering with angular limitation for projection electron lithography exposure at 100 keV

R. G. Tarascon, K. Bolan, Myrtle I. Blakey, R. M. Camarda, R. C. Farrow, Linus A. Fetter, H. A. Huggins, J. S. Kraus, Joyce Liddle, David A. Mixon, Anthony E. Novembre, G. P. Watson, S. D. Berger

Open publisher page 2 citations

Abstract

Scattering with angular limitation for projection electron lithography (SCALPEL)TM [S. D. Berger and J. M. Gibson, Appl. Phys. Lett. 57, 153 (1990)] has been used to evaluate the lithographic performance of a negative-acting silicon containing chloromethylstyrene resist at 100 keV [A. E. Novembre, M. J. Jurek, A. Kornblit, and E. Reichmanis, Polym. Eng. Sci. 29, 920 (1989)]. This article presents the preliminary evaluation of the resist in a small field of view SCALPEL machine using masks with a membrane area of 1 mm2. A resolution of 0.15 μm was obtained at 61 μC/cm2. Furthermore, the good electron-beam sensitivity of this well-characterized negative resist has allowed us to optimize the alignment, astigmatism, and focus of the experimental tool.

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What this paper is about

Scattering with angular limitation for projection electron lithography (SCALPEL)TM [S. D. Berger and J. M. Gibson, Appl. Phys. Lett. 57, 153 (1990)] has been used to evaluate the lithographic performance of a negative-acting silicon containing chloromethylstyrene resist at 100 keV [A. E. Novembre, M. J. Jurek, A. Kornblit, and E. Reichmanis, Polym. Eng. Sci. 29, 920 (1989)]. This article presents the preliminary evaluation of the resist in a small field of view SCALPEL machine using masks with a membrane area of 1 mm2. A resolution of 0.15 μm was obtained at 61 μC/cm2. Furthermore, the good electron-beam sensitivity of this well-characterized negative resist has allowed us to optimize the alignment, astigmatism, and focus of the experimental tool.

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Available abstract

Scattering with angular limitation for projection electron lithography (SCALPEL)TM [S. D. Berger and J. M. Gibson, Appl. Phys. Lett. 57, 153 (1990)] has been used to evaluate the lithographic performance of a negative-acting silicon containing chloromethylstyrene resist at 100 keV [A. E. Novembre, M. J. Jurek, A. Kornblit, and E. Reichmanis, Polym. Eng. Sci. 29, 920 (1989)]. This article presents the preliminary evaluation of the resist in a small field of view SCALPEL machine using masks with a membrane area of 1 mm2. A resolution of 0.15 μm was obtained at 61 μC/cm2. Furthermore, the good electron-beam sensitivity of this well-characterized negative resist has allowed us to optimize the alignment, astigmatism, and focus of the experimental tool.

Key concepts: Resist, Electron-beam lithography, Lithography, Optics, Materials science, Scattering, X-ray lithography, Electron scattering

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