61.3: Amorphous Silicon TFT Technology for Rollable OLED Displays
S. Wagner, Lin Ge Han, Bahman Hekmatshoar, Katherine Wei Song, Prashant R. Mandlik, Kunigunde H. Cherenack, James C. Sturm
Abstract
S. Wagner, Lin Ge Han, Bahman Hekmatshoar, Katherine Wei Song, Prashant R. Mandlik, Kunigunde H. Cherenack, James C. Sturm
Abstract
Abstract Amorphous silicon thin‐film transistors were designed for roll‐out OLED screens in hand‐held devices. Separate TFTs reached a saturation current of 6 μA/square, an output current half‐life extrapolating to 1,000 years, and were rolled to 1 mm diameter. All three parameters set new world records.
OpenAlex reports 3 citations for this work. Citation counts describe recorded attention and do not establish research quality.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
Abstract Amorphous silicon thin‐film transistors were designed for roll‐out OLED screens in hand‐held devices. Separate TFTs reached a saturation current of 6 μA/square, an output current half‐life extrapolating to 1,000 years, and were rolled to 1 mm diameter. All three parameters set new world records.
Key concepts: Thin-film transistor, Amorphous silicon, OLED, Materials science, Optoelectronics, Amorphous solid, Oxide thin-film transistor, Silicon