2010SID Symposium Digest of Technical PapersRequires access

61.3: Amorphous Silicon TFT Technology for Rollable OLED Displays

S. Wagner, Lin Ge Han, Bahman Hekmatshoar, Katherine Wei Song, Prashant R. Mandlik, Kunigunde H. Cherenack, James C. Sturm

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Abstract

Abstract Amorphous silicon thin‐film transistors were designed for roll‐out OLED screens in hand‐held devices. Separate TFTs reached a saturation current of 6 μA/square, an output current half‐life extrapolating to 1,000 years, and were rolled to 1 mm diameter. All three parameters set new world records.

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Abstract Amorphous silicon thin‐film transistors were designed for roll‐out OLED screens in hand‐held devices. Separate TFTs reached a saturation current of 6 μA/square, an output current half‐life extrapolating to 1,000 years, and were rolled to 1 mm diameter. All three parameters set new world records.

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Available abstract

Abstract Amorphous silicon thin‐film transistors were designed for roll‐out OLED screens in hand‐held devices. Separate TFTs reached a saturation current of 6 μA/square, an output current half‐life extrapolating to 1,000 years, and were rolled to 1 mm diameter. All three parameters set new world records.

Key concepts: Thin-film transistor, Amorphous silicon, OLED, Materials science, Optoelectronics, Amorphous solid, Oxide thin-film transistor, Silicon

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