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2014•ECS TransactionsRequires access

(Invited) Solution Processed Oxide Thin Film Transistors

Christophe Avis, Jin Jang

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Abstract

The performance of oxide thin-film-transistors (TFTs) by solution process is investigated. From the choice of precursors to the TFTs, each step has its own importance to produce high performance TFTs. The TFT performance is also enhanced by the use of high-k dielectrics such as aluminum oxide (AlOx) instead of silicon dioxide (SiO2). We discuss the performance of both crystalline (SnO2, In2O3) and amorphous (ZTO, IZTO) active materials, manufactured by inkjet-printing. Field-effect mobility of 110cm2/Vs is achieved.

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What this paper is about

The performance of oxide thin-film-transistors (TFTs) by solution process is investigated. From the choice of precursors to the TFTs, each step has its own importance to produce high performance TFTs. The TFT performance is also enhanced by the use of high-k dielectrics such as aluminum oxide (AlOx) instead of silicon dioxide (SiO2). We discuss the performance of both crystalline (SnO2, In2O3) and amorphous (ZTO, IZTO) active materials, manufactured by inkjet-printing. Field-effect mobility of 110cm2/Vs is achieved.

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Available abstract

The performance of oxide thin-film-transistors (TFTs) by solution process is investigated. From the choice of precursors to the TFTs, each step has its own importance to produce high performance TFTs. The TFT performance is also enhanced by the use of high-k dielectrics such as aluminum oxide (AlOx) instead of silicon dioxide (SiO2). We discuss the performance of both crystalline (SnO2, In2O3) and amorphous (ZTO, IZTO) active materials, manufactured by inkjet-printing. Field-effect mobility of 110cm2/Vs is achieved.

Key concepts: Thin-film transistor, Oxide thin-film transistor, Materials science, Amorphous solid, Oxide, Optoelectronics, Dielectric, Transistor

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