4.3: Transparent ZnO Thin Film Transistor Array for the Application of Transparent AM‐OLED Display
Sang‐Hee Ko Park, Chi‐Sun Hwang, Jeong-Ik Lee, Sung Mook Chung, Yong Suk Yang, Lee‐Mi Do, Hye Yong Chu
Abstract
Sang‐Hee Ko Park, Chi‐Sun Hwang, Jeong-Ik Lee, Sung Mook Chung, Yong Suk Yang, Lee‐Mi Do, Hye Yong Chu
Abstract
Abstract We have fabricated 2.15 inch AM‐OLED panel composed of 176 × 144 (106 dpi) transparent pixels driven by ZnO‐TFT. Transparent ZnO thin film deposited by means of atomic layer deposition at 100°C was used for the active channel. The ZnO TFT had a mobility of 1.13cm 2 /V.s, a threshold voltage of 0.8V, and an on/off ratio of 10 6 . The fabrication of the ZnO TFT array for AM‐OLED display has been carried out with four‐mask process. and the integration of the ZnO TFT array and the transparent OLED consisted of a transparent anode and cathode and organic layers led to really transparent display.
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Abstract We have fabricated 2.15 inch AM‐OLED panel composed of 176 × 144 (106 dpi) transparent pixels driven by ZnO‐TFT. Transparent ZnO thin film deposited by means of atomic layer deposition at 100°C was used for the active channel. The ZnO TFT had a mobility of 1.13cm 2 /V.s, a threshold voltage of 0.8V, and an on/off ratio of 10 6 . The fabrication of the ZnO TFT array for AM‐OLED display has been carried out with four‐mask process. and the integration of the ZnO TFT array and the transparent OLED consisted of a transparent anode and cathode and organic layers led to really transparent display.
Key concepts: OLED, Thin-film transistor, Materials science, Optoelectronics, Fabrication, Cathode, Flat panel display, Layer (electronics)