Plasma immersion ion implantation characteristics with q-nonextensive electron velocity distribution
Nasrin Navab Safa, Hamid Ghomi, Ali Reza Niknam
Abstract
Nasrin Navab Safa, Hamid Ghomi, Ali Reza Niknam
Abstract
The plasma immersion ion implantation process is investigated in the presence ofq–nonextensive electrons by using a one-dimensional fluid model. The effect of the nonextensivity parameter,q, on the plasma parameters and sheath dynamics during the implantation process is studied. The results show that the implantation dose can be enhanced in the presence of energetic electrons at the tail of the distribution function. Different parameters of plasma such as sheath thickness, ion velocity and ion density show more change at the larger values of theq–parameter. Furthermore, the results of simulation tend to what is predicted by the Maxwellian electron distribution function (q= 1).
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The plasma immersion ion implantation process is investigated in the presence ofq–nonextensive electrons by using a one-dimensional fluid model. The effect of the nonextensivity parameter,q, on the plasma parameters and sheath dynamics during the implantation process is studied. The results show that the implantation dose can be enhanced in the presence of energetic electrons at the tail of the distribution function. Different parameters of plasma such as sheath thickness, ion velocity and ion density show more change at the larger values of theq–parameter. Furthermore, the results of simulation tend to what is predicted by the Maxwellian electron distribution function (q= 1).
Key concepts: Plasma, Electron, Physics, Ion, Atomic physics, Plasma-immersion ion implantation, Distribution function, Ion implantation